IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.

Product Details

Edition:
1.0
Published:
07/15/2020
Number of Pages:
44
File Size:
1 file , 1.7 MB